| PART |
Description |
Maker |
| GA10JT12-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA50JT06-CAL-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA20JT12-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| SSR40C20 SSR40C30 SSR40C30CT SSR40C20CTM |
20 A, 200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA
40A / 300V Schottky Silicon Carbide Centertap Rectifier
|
SOLID STATE DEVICES INC
Solid States Devices, Inc
|
| GA100JT12-227-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER
10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| STPSC606 STPSC606D STPSC606G-TR |
6 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| SHD617112BN SHD617112BP SHD617112P SHD617112AN SHD |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| UPSC600 UPSC200 UPSC400 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
MICROSEMI[Microsemi Corporation]
|
| PV15-24S PV15-15S PV15-5S PV15-48S |
TRANS,WALL,9VDC/200mA,F1 2.1mm X 55mm,UL/CSA(CTR-NEG)
TRANS,WALL,REG,6VDC/1A 2.1mmX5.5mm,CTR POS,UL/CSA
TRANS,WALL,9VDC/200mA, M2,3.5mm,UL/CSA
TRANS,WALL,9VDC/300mA,F2, 2.5mmX5.5mm,UL/ULC
TRANS,WALL,9VDC/300mA,F2 2.1mm X 5.5mm,UL/CSA
|
Astrodyne, Inc.
|
| SDP10S30 SDB10S30SMD SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 10A diode in TO263 package
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
|
